Nano-sized GaN HEMT simulator
GaN HEMT device analysis tool
Explanation of the physical model used for analyzing APSYS's field-effect transistor (FET) devices. Introduction of the quantum ballistic current transport model. Comparison of simulation results for GaN HEMT using the Non-Equilibrium Green's Function (NEGF) method and the drift-diffusion equation in APSYS. The results from NEGF are similar to the experimental results in terms of the shape of the I-V characteristics.
- 企業：クロスライトソフトウェアインク日本支社
- 価格：Other
